CY7C1565KV18-550BZXC Electronic Components

CY7C1565KV18-550BZXC Electronic Components belongs to 72-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) of Cypress electronic components.The CY7C1565KV18-550BZXC is synchronous pipelined Burst SRAM equipped with a read port and a write port. The read port is dedicated to read operations and the write port is dedicated to write operations. 

Data flows into the SRAM through the write port and flows out through the read port. These devices multiplex the address inputs to minimize the number of address pins required. By having separate read and write ports, the QDR II+ completely eliminates the need to “turnaround” the data bus and avoids any possible data contention, thereby simplifying system design. Each access consists of four 36-bit data transfers in the case of CY7C1565KV18-550BZXC, in two clock cycles.

Product Features

Type

Main product features

CY7C1565KV18-550BZXC

Separate independent read and write data ports

550-MHz clock for high bandwidth

Four-word burst for reducing address bus frequency

 Available in 2.5-clock cycle latency

Product Description

The CY7C1565KV18 is1.8-V synchronous pipelined SRAM, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations.


Depth expansion is accomplished with port selects, which enables each port to operate independently. All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the K or K input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry.

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